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| AO6700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6700 is Pb-free (meets ROHS & Sony 259 specifications). AO6700L is a Green Product ordering option. AO6700 and AO6700L are electrically identical. Features VDS (V) = 20V ID = 4.1A (VGS = 4.5V) RDS(ON) < 50m (VGS = 4.5V) RDS(ON) < 65m (VGS = 2.5V) RDS(ON) < 95m (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A D TSOP6 Top View K S G A D D K 16 25 34 G S A Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current Pulsed Drain Current B A MOSFET 20 8 4.1 3.3 10 Schottky Units V V A VGS TA=70C ID IDM VKA TA=25C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C A B TA=70C TA=25C TA=70C IF IFM PD TJ, TSTG Symbol RJA RJL RJA RJL 1.39 0.89 -55 to 150 Typ 70 102 51 129 158 52 20 1.5 1 10 0.78 0.5 -55 to 150 Max 90 130 80 160 200 80 V A W C Units C/W Steady-State Steady-State t 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient Maximum Junction-to-Lead C A C/W AO6700 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=4.1A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=3.6A VGS=1.8V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=4.1A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.4 10 41.6 63 54 74 10.5 0.8 1 1.8 449 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 74 51.6 4.9 5.9 VGS=4.5V, VDS=10V, ID=4.1A 0.36 1.3 4.5 VGS=5V, VDS=10V, RL=2.35, RGEN=0 IF=4.1A, dI/dt=100A/s 6 32.7 7.1 13 3.3 0.39 0.5 0.02 20 34 5.2 0.8 10 16 6 7.2 550 50 80 65 95 0.6 Min 20 1 5 100 1 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V mA pF ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4.1A, dI/dt=100A/s IF=0.5A VR=16V VR=16V, TJ=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 2 : Sept 2005 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6700 MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 VGS =2.0V 12 8 25C 6 8 VGS =1.5V ID(A) 4 2 0 0 1 2 VDS(Volts) Figure 1: On-Regions Characteristi 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics 125C 10 VGS=5V ID(A) 4 VGS =1.0V 0 cs 90 Normalize ON-Resistance 80 RDS(ON)(m) 70 60 50 40 30 0 2 4 6 8 10 VGS =4.5V VGS =2.5V VGS =1.8V 1.6 ID=4.1A 1.4 VGS=1.8V VGS=2.5V VGS=4.5V 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 90 80 70 IS(A) 60 50 40 30 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1E+01 1E+00 125C 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C ID=4.1A RDS(ON)(m) 125C Alpha & Omega Semiconductor, Ltd. AO6700 MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VDS=4.5V 4 VGS(Volts) 3 2 1 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 800 ID=4.1A Capacitance (pF) 700 600 500 400 300 200 100 0 0 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss 100 RDS(ON) limited Power (W) 100 10 ID(A) 0.1s 1 TJ(Max) =150C TA =25C 0.1 0.1 1 10 VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1s 10s DC 1ms 10ms 100s 10s 12 10 8 6 4 2 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.Z JA.R JA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton T 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence Alpha & Omega Semiconductor, Ltd. |
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